Study characterization of modern 4h-sic power mosfetsF

Formato

Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica Dottorato di Ricerca in ICT. Ciclo XXXIII

SiC Power MOSFETs; Defectiveness; Threshold-Voltage Instability; PBTI, flicker noise; Research Subject Categories::TECHNOLOGY::Information technology::Computer engineering

ING-INF/01;