DSpace at My University: Recent submissions
Items 141-160 di 5101
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Charged-particle distributions and material measurements in ps = 13 TeV pp collisions with the ATLAS Inner Detector
(2017-07-14)The Run 2 of the Large Hadron Collider, which began in Spring 2015, offers new challenges to the Experiments with its unprecedented energy scale and high luminosity regime. To cope with the new experimental conditions, ... -
Charged-particle distributions and material measurements in ps = 13 TeV pp collisions with the ATLAS Inner Detector
(2017-07-14)The Run 2 of the Large Hadron Collider, which began in Spring 2015, offers new challenges to the Experiments with its unprecedented energy scale and high luminosity regime. To cope with the new experimental conditions, ... -
TiO2 nanotubes in nanotechnologies
(2010-12-14) -
Controllo ambientale. Campagne di monitoraggio atmosferico
(2012-11-29)La normativa ambientale riveste una importanza fondamentale per chi effettua ricerca in campo ambientale poiché, da un lato, definisce lo stato attuale ed i limiti vigenti; dall’altro, evidenzia proprio tali limiti ... -
Adsorption properties of carbon nanotubes and application of thermal desoprtion spectroscopy to ammonia and methane ices and zoisite
(2010-12-14)In this work we wanted to underline the importance of Thermal Desorption Spectroscopy and its applications to several branches of Physics. Temperature-programmed desorption techniques (TPD) are important to determinate ... -
Critical properties of 2D Z(N) vector models for N > 4
(2011-12-19) -
Controllo ambientale. Campagne di monitoraggio atmosferico
(2012-11-29) -
TiO2 nanotubes in nanotechnologies
(2010-12-14) -
Controllo ambientale. Campagne di monitoraggio atmosferico
(2012-11-29) -
Controllo ambientale. Campagne di monitoraggio atmosferico
(2012-11-29) -
Controllo ambientale. Campagne di monitoraggio atmosferico
(2012-11-29) -
Investigation of dimensionality e ects on capacitorless memory and trench power MOSFET
(2011-12-19)This thesis has dealt with two di erent problems solved with electronic device simulations (TCAD). The rst relates to the Trench power MOSFET device characterization, with particular attention to device breakdown ...